Volume 1, Issue 1, December 2016, Page: 1-5
Impact of Electron-Beam Radiation on Electrical Properties of Pb1-xMnxTe Epitaxial Films
M. A. Mehrabova, Institute of Radiation Problems of Azerbaijan National Academy of Sciences, Baku, Azerbaijan
Received: Nov. 1, 2016;       Accepted: Nov. 14, 2016;       Published: Dec. 17, 2016
DOI: 10.11648/j.ns.20160101.11      View  2108      Downloads  66
Abstract
It has been obtained Pb1-xMnxTe (x=0.04) epitaxial films on BaF2 substrates at 10-4Pa vacuum by molecular beam condensation method and studied the impact of electron-beam radiation on their electrical properties. From temperature dependence curves of electrical conductivity it has been determined that the electrical conductivity decreases with an increase of Mn concentration. İnfluence of electron flux Ф=2·1015см-2 (E=4.5MeV,) leads to a decrease of electrical conductivity due to the compensation of local level, further increase of radiation dose up to Ф=1016см-2 increases the electrical conductivity. It has been investigated the impact of electron-beam radiation on VAC.
Keywords
Semimagnetic Semiconductor, Thin Film, Epitaxial Film, Substrate, VAC, Electrical Conductivity, Electron-Beam Radiation
To cite this article
M. A. Mehrabova, Impact of Electron-Beam Radiation on Electrical Properties of Pb1-xMnxTe Epitaxial Films, Nuclear Science. Vol. 1, No. 1, 2016, pp. 1-5. doi: 10.11648/j.ns.20160101.11
Copyright
Copyright © 2016 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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